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H9TKNNN2GDMRFR-NDM (Memory ic)

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USD $1 - $40 / Piece

10 Pieces(Min.Order)

Supply Ability 5000 Piece / Pieces per Month
Port Shenzhen/Hongkong
Payment Terms:T/T L/C D/P D/A Credit Card PayPal

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Product Details

Model Number:	H9TKNNN2GDMRFR-NDM(NAND Flash Memory)mobile phone flash ic	Type:	Logic ICs	Brand Name:	Original Brand
Place of Origin:	Chungcheongbuk-do, South Korea

Product Description

Specifications

1.hot sale H9TKNNN2GDMRFR-NDM(Memory ic)
2.New Original
3.Best price,Excellent quality
4.In stock,Fast delivery

Product Description

Please let us know if you would like to know more about H9TKNNN2GDMRFR-NDM(NAND Flash Memory) . Please feel free to contact us.

Part No.	Den.	Org.	Vol	Speed	Power	PKG	Product Status	RoHS
H9TKNNN2GDAPLR	2Gb	x32	1.8V-1.2V-1.2V	Y / D / G	Low Power	168	Mass production	O

H9TKNNN2GDAPLR

Features

[ PoP ]

Operation Temperature - -30oC ~ 85oCPackcage
168-ball FBGA
12.0x12.0mm2, 0.8t, 0.5mm pitch
Lead & Halogen Free

[ LPDDR2 S4B ]

VDD1 = 1.8V (1.7V to 1.95V)
VDD2, VDDCA and VDDQ = 1.2V (1.14V to 1.30)
HSUL_12 interface (High Speed Unterminated Logic 1.2V)
Double data rate architecture for command, address and data Bus;
- all control and address except CS_n, CKE latched at both rising and falling edge of the clock
- CS_n, CKE latched at rising edge of the clock- two data accesses per clock cycle
Differential clock inputs (CK_t, CK_c)
Bi-directional differential data strobe (DQS_t, DQS_c)
- Source synchronous data transaction aligned to bi-directional differential data strobe (DQS_t, DQS_c)
- Data outputs aligned to the edge of the data strobe (DQS_t, DQS_c) when READ operation
- Data inputs aligned to the center of the data strobe (DQS_t, DQS_c) when WRITE operation
DM masks write data at the both rising and falling edge of the data strobe
Programmable RL (Read Latency) and WL (Write Latency)
Programmable burst length: 4, 8 and 16 Auto refresh and self refresh supported
All bank auto refresh and per bank auto refresh supported
Auto TCSR (Temperature Compensated Self Refresh)
PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask
DS (Drive Strength)
DPD (Deep Power Down)
ZQ (Calibration)

Computing Memory
Consumer Memory
Graphics Memory
Mobile Memory
NAND Flash
CMOS Image Sensor
EOL Products

Creating new paradigms with innovative technology

HBM (High Bandwidth Memory) is a new future memory using TSV and Wide IO technology in order to satisfy performance requirement that has increased exponentially.
SK hynix will enhance product portfolios with HBM technology to diversify into various applications such as Graphic card, Network/HPC and PC/Game console.

Revolutionary path of mobile DRAM

WIO2 (Wide IO 2) is the strong candidate of future mobile DRAM achieving high bandwidth (51.2GB/s, up to 68GB/s), advanced power efficiency, and small form factor.

Part No.	Den.	Org.	Vol	Speed	Power	PKG	Product Status	RoHS
H9TKNNN2GDAPLR	2Gb	x32	1.8V-1.2V-1.2V	Y / D / G	Low Power	168	Mass production	O
H9TKNNN4GDAPLR	4Gb	x32	1.8V-1.2V-1.2V	G	Low Power	168	Mass production	O
H9TKNNN4GDARHR	4Gb	x32	1.8V-1.2V-1.2V	D / G	Low Power	216	Mass production	O
H9TKNNN4GDMPLR	4Gb	x32	1.8V-1.2V-1.2V	Y / D / G	Low Power	168	Mass production	O
H9TKNNN4GDMRHR	4Gb	x32	1.8V-1.2V-1.2V	D / G	Low Power	216	Mass production	O

Experience rich life with the most stable eMMC

System performance depends highly on eMMC performance, such as random read and write IOPS. SK hynix eMMC provides the best IOPs performance by using advanced FTL algorithm. Furthermore, features of eMMC5.0 allows for an even greater improvement in performance.

SK hynix CIS touts its vivid color expression

SK hynix manufactures CIS on CMOS technology, offering compact from factors, higher speed and superior image quality. SK hynix is enhancing its technical excellence in accelerating technology development to provide advanced quality products and ability to lead market needs.

End Of Life Products

Computing Memory	DDR3 SDRAM	Component	1Gb \| 2Gb \| 4Gb
	DDR3 SDRAM	Module	UBDIMM \| SODIMM \| VLP RDIMM \| RDIMM
	DDR2 SDRAM	Component	1Gb \| 2Gb
	DDR2 SDRAM	Module	UBDIMM \| SODIMM
	DDR SDRAM	Module	UBDIMM \| RDIMM
Consumer Memory	DDR3 SDRAM		1Gb \| 2Gb\| 4Gb
	DDR2 SDRAM		256Mb \| 512Mb
	DDR SDRAM		128Mb \| 256Mb \| 512Mb
	SDR SDRAM	Component	16Mb \| 64Mb \| 128Mb \| 256Mb \| 512Mb \| 1Gb
	SDR SDRAM	Module	UBDIMM \| RDIMM \| SODIMM
Graphics Memory	GDDR SDRAM
	DDR2 SDRAM
	DDR3 SDRAM
	GDDR3 SDRAM
	GDDR4 SDRAM
	GDDR5 SDRAM
Mobile Memory	Mobile SDR
	Mobile DDR
	PSRAM
	Super Low Power SRAM
	Low Power Slow SRAM

Manufacturer Part Number:	H9TKNNN2GDMRFR-NDM (NAND Flash Memory)
Manufacturer / Brand:	Original Brand
Quantity Available:	5000
Unit Price:	Contact us
D/C (Date Code):	Generally newest 2014+
Lead Time (Delivery Time):	IN STOCK, Fast delivery
Condition:	NEW AND UNUSED, ORIGINAL FACTORY PACKING
Package / Case:
Packaging:	Factory sealed packing
SPQ (Standard Package Quantity):	Contact us
MOQ:	10Piece
Datasheet Download:	Contact: winwin-ke@hotmail TradeManager:winchips /skype:win-chips

Packaging & Shipping

Factory sealed packing,and sended in the following types: Tube, Tray, Tape and Reel, Bulk packing, Bag, etc. Please kindly confirm with your sales if you need any other assistant or demand.

Our Services

Delivery time:

The goods will be shipped within 1-2 working days after confirming buyer’s payment. If you are in urgent need, we will arrange the shipment on the very day.

Shipment:

1.If you don’t have a account with any courier, we will arrange shippment and prepay the shipping cost here.

2.The item you order will be sent by DHL, UPS, FedEX, TNT and etc. If you prefer any other shipping ways, please tell us and we will check whether it is available. We will ensure the lowest shipment cost.

if your address is remote area , you need to pay the extra charge of DHL $USD35,other wise we will send the package by EMS.Hope your kindness understanding .Thanks!

for the customs value , if you have special requirements ,pls let us know . otherwise we will do it as our regulation (usually $USD10-20)

Tracking:

When our colleague sell your parts out. The tracking number will be e-mail to you immediately. Please confirm the receipt of the products if you receive the parcel.

Quality Control:

Before each shippment, our every product must be examined. If it fail to pass our internal inspection, we will inform you at the right time.

Refund&Replacement:

If some of the items you received aren’t in exact conform with your requirs. We would still responsibly arrange your refund and replacement. The return items must remain their original condition as same as what we sent to you.

Pls contact us within warranty period(1 months ). Warranty doesn’t include any man-made damage
Others:

Any other request, please feel free to contact with our salesman.

Company Information
Certificate of Conformity

Quality testing machine

Our company

Warehouse

If you need any other similar product manufacturers.Pls contact us. And if you have orders please do not hesitate to discuss the price with us.

More than 5,000,000 ownstock inventory to meet your needs of different products.(we cannot show them out all)

Competitive price advantage helps to save your purchase cost and your precious time.

FAQ

About the price please check up with our customer service.

Contact Us

Shenzhen Pcxy Technology Co., Limited: Contact nameLily ke; Phone86-0754-13714045673; AddressI Room,18/F,D Building,Huaqiang plaza,Huaqiang North Road,Futian District,Shenzhen Shenzhen,Guangdong

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H9TKNNN2GDMRFR-NDM (Memory ic)

Product Details

Product Description

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