Single Crystal Indium Phosphide Wafers 2 - Inch for PIN and APD Diodes

Delivery Time:in 30 days
Certification:CAS / ISO9001/ SGS
Dedicated exclusively to Indium Phosphide, we provide high-performance substrates for a wide range of devices for both micro(HBT/HEMT) and optoelectronic(LED/LD/PIN/APD). With the proprietary Epiready technology (EPICLEAN ), the company is strategically positioned to be a dominant supplier of InP substrates.   Indium Phosphide Single Crystal Applications:

1. Fiber Optics Networks Components

2. Dense Wavelength Division Multiplexing (DWDM) Lasers

3. Vertical-Cavity Surface-Emitting Laser (VCSEL)

4. Pump Lasers

5. PIN and APD Diodes

6. Amplifiers

7. For High Speed Electronics Circuit Using HBT

8. HEMT for Fiber Optics, Wireless and Space Communication and Automotive Applications

InP Single Chip Parameters(VGF Crystal Growth Process Technology)
Item	Diameter (inch)	Type	Carrier Concentration (cm-3)	Electron Mobility (cm2/V.s)	Resistivity (Ω.m)	Dislocation Density (cm-2)
InP	2	N	≤1×1018	(3.5-4)×103		＜1×103
S-InP		N	(0.5-1)×1018	(2-4)×103		＜500
Zn-InP		P	(0.5-1)×1018	50-70		＜1×103
Fe-InP		SI		＞2000	＞0.5×107	＜2.5×103
Single-side and double-side polishing, epiclean. Crystal orientation(100). Standard thickness for two-inch chip is 350±25μm.