SG01S-5 Broadband SiC Based UV Photodiode A = 0.06 mm2

SG01S-5

Broadband SiC based UV photodiode A = 0.06 mm2

◆ SG01S-5 UV Photodiode eneral features

Properties of the SG01S-5 UV Photodiode

• Broadband UVA+UVB+UVC, PTB reported high chip stability
• Active Area A = 0.06 mm2
• TO5 hermetically sealed metal housing, short cap, 1 isolated p
• 10mW/cm2 peak radiation results a current of approx. 780 nA

About the material Silicon Carbide (SiC)
SiC provides  the unique property of  extreme  radiation hardness, near-perfect  visible blindness,  low dark  current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity)  is also  low,<0.1%/K. Because of the  low noise (dark current  in the fA range), very  low UV radiation intensities can be measured reliably. 

Options 
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2 Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).

◆ SG01S-5 UV Photodiode Nomenclature

◆ SG01S-5 UV Photodiode SpecIfication