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GaN Substrate GaN Epi Wafer Manufacturer for HEMT
- 10000 Piece / Pieces per Month
- shanghai
- T/T
- GaN Substrate GaN Epi Wafer Manufacturer for HEMT
- GaN Epi wafer On silicon carbide supplier
- Gallium Nitride Epitaxial wafer on sapphire substrate supplier china
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Product Details
Brand Name: | Homray-material | Place of Origin: | China |
Product Description
Homray Material as the leading manufacturer and supplier of Gallium Nitride(GaN)Epi wafer, GaN substrate wafer, Silicon Carbide (SiC) Epi wafer, SiC substrate wafer for the wide bandgap semiconductor; Dummy Grade Silicon Wafer, Test Grade Silicon Wafer, We can produce wide range of Compound Semiconductor Wafer and LED Wafer Substrate including Nitride Semiconductor: 2 inch, 4 inch GaN Templates, 2inch Free-Standing GaN Substrates, Semi-insulating GaN Substrates; Carbide Semiconductor: SiC Conductive Substrates , SiC Epitaxial Wafer so as to meet our various customer's requests, including researching grade, dummy and foundry grade.
Layer Name | Description | Thickness | Comment |
Substrate | 2-8 inch (111) | 625-1200um | Other substrate diameters available upon request |
HR Buffer | Buffer | 3-6um | Buffer schemes can be customized |
GaN Channel | GaN | 200nm | Can be customized |
Spacer Layer | AIN | ~1nm | Thickness can be customized |
Barrier | AI0.25Ga0.75N | 25nm | Thickness and composition can be customized |
Cap Layer | GaN or SiN | 2nm | Can be customized |
Contact Us
- Homray Material Technology
- Contact nameTina Chang
- Phone86-512-67078567
- Address60 Suli Road Suzhou,Jiangsu
Silicon Wafer | Silicon Carbide Wafer | Gallium Nitride |
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