GaN based LED Epitaxial Wafer Manufacturer Provide 4 inch GaN Wafer

GaN based LED Epitaxial Wafer Manufacturer Provide 4 inch GaN Wafer

Homray Material Technology provide PPS Sapphire Substrate GaN Epitaxial wafer for LED applicatuon.The GaN-based LEDs grown on the sapphire substrate have current transport along the lateral direction due to the insulating nature of the substrate. In addition, the finite resistance of the n-type GaN buffer layer causes the p–n junction current to be nonuniform and crowds near the edge of the contact.

GaN is the third-generation semiconductor material after silicon and gallium arsenide. Its wide-bandgap characteristics make that GaN is an ideal material for blue light output. In addition, GaN also has a small dielectric constant, excellent thermal conductivity and thermal stability, which can meet the requirements of high frequency, high temperature, high pressure and high power applications.