100mm SiC wafer Manufacturer Semi-insulating SiC Substrate Price

4H-SiC Substrate Manufacturer 150mm N type SiC wafer

As the leading SiC Substrate wafer manufacturer,  Homray Material Technology offer 4 inch SiC Substrate and 6 inch SiC Wafer. We provide conductive N type and semi-insulating SI type. There are 4 grade for customers selecting: Ultralow MPD grade, production grade,research grade and dummy grade SiC substrate. 

It is estimated that before 2025, with the introduction of 6-inch SiC wafer into mass production, power semiconductor factory to discuss production technology progress, promote the reduction of SiC power semiconductor cost, drive the use of SIC-PM object will be expanded from high order electric vehicles to part of the medium order electric vehicles, and after 2026, considering the use of new electric vehicles sic-PM factory increase,It is estimated that the automotive SIC-PM market will enter the expansion period from 2026, and it is estimated that the market size of SIC-PM will surpass that of SI-PM in 2030.

Based on the above characteristics, silicon carbide devices have more obvious advantages compared with silicon based devices, which are embodied in:  

(1) Lower impedance, can reduce the product volume, improve conversion efficiency;  

(2) higher frequency, the working frequency of silicon carbide devices can reach 10 times of silicon based devices, and the efficiency does not decrease with the increase of frequency, can reduce the energy loss;  

(3) Can operate at a higher temperature, while the cooling system can be done more simply.  Silicon carbide power devices can work at temperatures above 600℃, four times that of the same silicon based devices, and can withstand more extreme working environments.