IRF3710 Infineon / IR MOSFET

IRF3710

Manufacturer: Infineon

Product Category: MOSFET

Technology: Si

Mounting Style: Through Hole

Package / Case: TO-220-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 100 V

Id - Continuous Drain Current: 57 A

Rds On - Drain-Source Resistance: 23 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Pd - Power Dissipation: 200 W

Channel Mode: Enhancement

Brand: Infineon / IR

Configuration: Single

Fall Time: 47 ns

Height: 15.65 mm

Length: 10 mm

Product Type: MOSFET

Rise Time: 58 ns

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical Turn-Off Delay Time: 45 ns

Typical Turn-On Delay Time: 12 ns

Width: 4.4 mm

Unit Weight: 0.068784 oz

factory pack quantity:  50