IXTQ60N20T New Products Electronic Chips IXTQ60N20 IXTQ60N20T

Mfr. #

IXTQ60N20T

Manufacturer IXYS

Product Category MOSFET

RoHS  Details

Technology Si

Mounting Style Through Hole

Package  Case TO-3P-3

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 200 V

Id - Continuous Drain Current 60 A

Rds On - Drain-Source Resistance 40 mOhms

Vgs - Gate-Source Voltage - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage 3 V

Qg - Gate Charge 73 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 175 C

Pd - Power Dissipation 500 W

Channel Mode Enhancement

Tradename HiPerFET

Packaging Tube

Brand IXYS

Configuration Single

Fall Time 22 ns

Forward Transconductance - Min 40 S

Product Power MOSFET Modules

Product Type MOSFET

Rise Time 13 ns

Factory Pack Quantity 30

Subcategory MOSFETs

Transistor Type 1 N-Channel

Type Trench

Typical Turn-Off Delay Time 33 ns

Typical Turn-On Delay Time 22 ns

Unit Weight 0.056438 oz

PRICE 4.77~5.3