SI3932DV-T1-GE3 Vishay Semiconductors MOSFET 30V Vds 20V Vgs TSOP-6
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Product Details
Brand Name: | Vishay Semiconductors | Place of Origin: | China | Model Number: | SI3932DV-T1-GE3 |
Type: | Other, MOSFET | Package Type: | Surface Mount |
Product Description
SI3932DV-T1-GE3
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TSOP-6
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 3.7 A
Rds On - Drain-Source Resistance: 58 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
Qg - Gate Charge: 6 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.4 W
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI3
Packaging: Reel
Packaging: Cut Tape
Packaging: KXXReel
Brand: Vishay Semiconductors
Configuration: Dual
Fall Time: 10 ns
Forward Transconductance - Min: 10 S
Product Type: MOSFET
Rise Time: 15 ns
factory pack quantity: 3000
Subcategory: MOSFETs
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 10 ns
Typical Turn-On Delay Time: 10 ns
Part # Aliases: SI3932DV-GE3
Unit Weight: 0.000705 oz
Contact Us
- Shenzhen Kexinxin Technology Co., Ltd.
- Contact nameAaron Lin
- Phone86-0755-23617721
- AddressFutian Shenzhen,Guangdong
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