600um SiC slicing wafer Manufacturer As-cut SiC substrate factory

600um SiC slicing wafer Manufacturer As-cut SiC substrate factory

What is slicing wafer? Our SiC slicing wafers were cutting from SiC ingot without grinding and polishing processing. Our SI type slicing wafer thickness about 600um. 4 inch As-cut SiC wafer and 6 inch slicing wafer are both available in HMT company. Our lead time of As-cut SiC wafer less than 4 weeks. If you are interested in SiC slicing wafer, please feel free to contact us for quotation now!

Based on the above characteristics, SiC devices have more obvious advantages compared with silicon based devices, which are embodied in:  

(1) Lower impedance, can reduce the product volume, improve conversion efficiency;  

(2) higher frequency, the working frequency of SiC devices can reach 10 times of silicon based devices, and the efficiency does not decrease with the increase of frequency, can reduce the energy loss;  

(3) Can operate at a higher temperature, while the cooling system can be done more simply.  SiC power devices can work at temperatures above 600℃, four times that of the same silicon based devices, and can withstand more extreme working environments.